Focusing of a vortex carrying beam with Gaussian background by an apertured system in presence of coma

In this paper, diffraction pattern of a vortex carrying beam with a Gaussian background has been studied by using Fresnel-Kirchhoff diffraction integral, in the presence of third-order coma. Results of intensity distribution and encircled energy at the Gaussian plane have been presented for two values of the topological charge. Positional shift and splitting of the dark core have been investigated in detail. It is noticed that the diffraction pattern of a beam with double topological charge is affected more by comatic aberration in comparison to the beam with single topological charge. We have also verified our results by using the optical transfer function approach. Propagation of an apertured Gaussian background vortex beam through a π-phase shifter has also been studied for two values of the topological charge.     

Focusing of linearly-, and circularly polarized Gaussian background vortex beams by a high numerical aperture system afflicted with third-order astigmatism

Effects of third-order astigmatism on the focused structure of linearly and circularly polarized Laguerre-Gaussian beams have been investigated by using vectorial Debye-Wolf integral. The results have been presented for total intensity distribution and squares of the polarization components at the focal plane of a high numerical aperture system, for two values of the topological charge. Astigmatism results in the stretching of the intensity pattern as well as of the squares of the polarization components. A split is observed in the intensity pattern of a focused beam having double topological charge, and also in the pattern of the longitudinal polarization component of circularly polarized beam even with unit topological charge.     

大气湍流对激光通信系统的影响

从分析激光在大气湍流场中的传输方程出发,忽略系统中的其它噪声,仅考虑由大气喘流引起的系统误码率,讨论了激光信号在传输过程中的振幅起伏以及强度起伏;推导出由大气湍流引起的光强起伏和系统误码率的关系,结果表明:在弱起伏条件下,对于系统误码率为10－9以下的要求,光强起伏应小于0.67;随着湍流强度C2n的增大,误码率增加很快;采用长波长的激光进行传输可以有效地降低系统误码率.     

Electronic structure of the PLD grown mixed phase MoS2/GaN interface and its thermal annealing effect

We report the electronic structure of Molybdenum disulfide (MoS₂) ultrathin 2D films grown by pulsed laser deposition (PLD) on top of GaN/c-Al₂O₃ (0001) substrates annealed up to 550 °C in an ultrahigh vacuum. Our X-ray photoemission spectroscopy (XPS) study shows that the grown films are mixed phase character with semiconducting 2H and metallic 1T phases. After ultrahigh vacuum (UHV) annealing, the 1T/2H phase ratio is significantly modified and film-substrate bonding becomes the leading factor influencing variation of mixed phase compositions. The semiconducting phase is partially transformed to metallic phase by thermal annealing; suggesting that the metallic phase observed here may indeed have more stability compared to the semiconducting phase. The notable enhancement of the 1T/2H ratio induces significant changes in Ga 3d core level spectra taken from bare GaN and MoS₂/GaN sample. The impact of S and/or Mo atoms on the Ga core level spectra is further pronounced with the thermal annealing of grown films. The analysis shows that an enhancement of 1T metallic phase with thermal annealing in MoS₂ layers is manifested by the occurrence of new spectral component in the Ga 3d core level spectra with the formation of Ga-S adlayer interaction through the Ga bonding in defect assisted GaN structure.     

Non-stoichiometry-induced metal-to-insulator transition in nickelate thin films grown by pulsed laser deposition

While controlling the cation contents in perovskite rare-earth nickelate thin films, a metal-to-insulator phase transition is reported. Systematic control of cation stoichiometry has been achieved by manipulating the irradiation of excimer laser in pulsed laser deposition. Two rare-earth nickelate bilayer thin-film heterostructures with the controlled cation stoichiometry (i.e. stoichiometric and Ni-excessive) have been fabricated. It is found that the Ni-excessive nickelate film is structurally less dense than the stoichiometric film, albeit both of them are epitaxial and coherent with respect to the underlying substrate. More interestingly, as a temperature decreases, a metal-to-insulator transition is only observed in the Ni-excessive nickelate films, which can be associated with the enhanced disproportionation of the Ni charge valence. Based on our theoretical results, possible origins (e.g. anti-site defects) of the low-temperature insulating state are discussed with the need of future work for deeper understanding. Our work can be utilized to realize unusual physical phenomena (e.g. metal-to-insulator phase transitions) in complex oxide films by manipulating the chemical stoichiometry in pulsed laser deposition.     

空间调制傅里叶变换红外光谱仪干涉系统透射效率研究

光学系统表面的反射与材料的吸收会降低空间调制傅里叶变换红外光谱仪中光的透过率。通过对干涉系统透过率函数的计算和对采样干涉图与复原光谱的仿真,结果显示透过率函数作用下的干涉图像对比度下降,复原光谱中的谱线强度发生衰减。分析表明,干涉图像对比度的下降主要是由分束器对入射光的有效反射引起的,而谱线强度的衰减则是由与增透膜的光强反射率R₁、分束膜的光强反射率R₂和材料的吸收系数α有关的透射效率函数所决定。通过分析论证,对于本文所研究的光谱波段,可以不考虑材料的吸收,所以透射效率主要由R₁和R₂决定。由此,将透射效率作为设计指标,根据系统的设计需求,就可以得到增透膜与分束膜光强反射率的容限值。     

脉冲电场对木瓜蛋白酶影响的荧光光谱分析

木瓜蛋白酶溶液在电场强度为50 kV·cm-1,频率1 500 Hz,脉冲宽度40 μs的脉冲电场下接受19 800个脉冲处理后,其活性降低了56.5％。文章采用荧光偏光光谱对处理前后的样品进行了分析。 处理后酶样的荧光强度明显大于处理前,在峰值位置其荧光强度增加超过50％,峰位从342 nm移到了346 nm左右,其荧光偏振幅度明显减小。由此推断出木瓜蛋白酶经脉冲电场处理后酶蛋白的α-螺旋结构松散拉伸,分子内部的氨基酸残基暴露于分子表面,并有部分发生离解游离于溶液中,导致活性部位的结构发生变化,最终导致酶失活。     

脉冲激光法连续制备纳米钴乙醇溶胶的研究

纳米钴因其优异的磁性能在磁记录材料 [1]、超顺磁材料 [2 ]、巨磁材料 [3 ]和雷达吸波 [4 ]方面具有重要应用 .金属钴有面心立方、密排六方和非晶态 3种结构 [5] .目前 ,用等离子加热及碳电弧法制备的纳米钴粉基本上都是面心立方结构 [6] .Gibson等 [7]用超声化学方法获得了密     

脉冲放电脱硫反应器中高能电子密度分布的光谱研究

脉冲流光放电产生的大于等于11.2 eV的高能电子能将处于基态的氮分子激发到N₂(C3Π_u)态,测试脉冲流光放电时的N₂(C3Π_u→B3Πg)发射光谱相对强度可以得出脉冲流光放电产生的高能电子的密度。实验在室温常压下研究了空气中线-板式脉冲流光放电脱硫反应器内高能电子密度分布情况,并研究了脉冲电压、反应器的线线间距对反应器内高能电子密度分布的影响。实验结果表明,反应器内的高能电子主要集中在放电线附近高电场区内,随着离放电线的距离增大,高能电子密度减小;脉冲电压对高能电子密度有很大影响,随着电压的升高,高能电子密度基本呈线性增大;线板间距固定,线线间距为线板间距的0.6～1倍时,反应器内高能电子密度分布较为均匀。     

Estimating the intensity of a cyclic Poisson process in the presence of linear trend

We construct and investigate a consistent kernel-type nonparametric estimator of the intensity function of a cyclic Poisson process in the presence of linear trend. It is assumed that only a single realization of the Poisson process is observed in a bounded window. We prove that the proposed estimator is consistent when the size of the window indefinitely expands. The asymptotic bias, variance, and the mean-squared error of the proposed estimator are also computed. A simulation study shows that the first order asymptotic approximations to the bias and variance of the estimator are not accurate enough. Second order terms for bias and variance were derived in order to be able to predict the numerical results in the simulation. Bias reduction of our estimator is also proposed.